Word of the Day: phase-change memory (PCM)

Word of the Day Daily updates on the latest technology terms |May 30, 2017

phase-change memory (PCM) Phase-change memory (PCM) is a form of computer RAM (random-access memory) that stores data by altering the state of the matter from which the device is fabricated. According to its proponents, PCM technology has the potential to provide inexpensive, high-speed, high-density, high-volume nonvolatile storage on an unprecedented scale. Because it is much closer in speed to dynamic RAM (DRAM), phase change memory technology is ideal for both non-volatile dual in-line memory modules (NVDIMMs) and non-volatile memory express (NVMe) solid state drives (SSDs). Apart from its speed advantage, phase change memory technology is also much more durable than flash, and any concern about the number of daily writes causing wear-out is not an issue. PCM is sometimes called "perfect RAM" (PRAM) because data can be overwritten without having to erase it first.   The structure of PCM material can change rapidly back and forth between amorphous and crystalline on a microscopic scale. In the amorphous or disordered phase, the material has high electrical resistance; in the crystalline or ordered phase, its resistance is reduced. This allows electrical currents to be switched on and off, representing digital high and low states. Because the physical structure is three-dimensional, the number of transistors that can exist in a chip of fixed size can be maximized, making it possible for PCM to function many times faster than conventional flash memory, while using less power. Quote of the Day "Phase-change memory holds out the promise of major advantages over DRAM and NAND flash." - Carol Sliwa   Trending Terms nonvolatile storage flash memory 3D XPoint DRAM NVDIMM NVMe NAND flash memory   Learning Center Phase change memory technology: Where is it headed? Phase change memory technology is here at last, but where it goes depends on the state of the flash market and whether PCM can live up to its own claims. IBM claims breakthrough with TLC phase-change memory IBM Research claims storage memory breakthrough; will phase-change memory beat Intel/Micron 3D XPoint as NAND successor? Optane memory: Opening the window on Intel's latest technology Optane memory products are shipping, and they might have a meaningful effect on various IT uses, but maybe not as big an impact as was first proposed. The state of flash storage systems Vendors remain focused on improving flash storage systems, but the next step will be harder than adding flash to our normal system configurations. NAND flash technology is just the beginning NAND flash technology delivers a high level of performance at a high rate of speed, but storage vendors are developing products that will greatly expand solid state's role. Writing for Business Servers equipped with flash storage are increasingly common and can _________ reduce latency. A. farther B. further Answer       Stay In Touch For feedback about any of our definitions or to suggest a new definition, please contact me at: mrouse@techtarget.com   Visit the Word of the Day Archives and catch up on what you've missed!   FOLLOW US About This E-Newsletter This e-newsletter is published by the TechTarget network. To unsubscribe from Whatis.com, click here. Please note, this will not affect any other subscriptions you have signed up for. TechTarget, Whatis, 275 Grove Street, Newton, MA 02466. Contact: webmaster@techtarget.com Copyright 2016 TechTarget. All rights reserved.